CMPA2060035F

CMPA2060035D : The CMP2060035D is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. PN's: CMPA2060035D Features • 29 dB small signal gain • 35 W typical PSAT • Operation up to 28 V • High breakdown voltage • High temperature operation • Size.

CMPA2060035F1 : The CMPA2060035F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage 50-ohm matched amplifier, enabling very wide bandwidths to be achieved, in a small 0.5” square, screw-down package. Package Types: 440219 PN’s: CMPA2060035F1 Features Applications • 30% typical power added • Civil and military pulsed radar ef.