Up to 6 GHz Medium Power Silicon Bipolar
Transistor Technical Data
AT-42010
Features
• High Output Power: 12.
0 dBm Typical P1 dB at 2.
0␣ GHz 20.
5 dBm Typical P1 dB at 4.
0␣ GHz • High Gain at 1␣ dB␣ Compression: 14.
0 dB Typical G1 dB at 2.
0␣ GHz 9.
5 dB Typical G1 dB at 4.
0␣ GHz • Low Noise Figure: 1.
9 dB Typical NFO at 2.
0␣ GHz • High Gain-Bandwidth Product: 8.
0 GHz Typical fT • Hermetic Gold-ceramic Microstrip Package
functions.
The 20 emitter finger interdigitated geometry yields a medium sized
transistor with impedances that are easy to match for low noise and medium power applications.
This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in...