DatasheetsPDF.com

AT-42086

Part Number	AT-42086
Manufacturer	Agilent(Hewlett-Packard)
Description	Up to 6 GHz Medium Power Silicon Bipolar Transistor
Published	Mar 24, 2005
Detailed Description	Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 Features • High Output Power: 20.5 dBm Typi...
Datasheet	AT-42086 PDF File

Overview

Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 Features • High Output Power: 20.
5 dBm Typical P1 dB at 2.
0␣ GHz • High Gain at 1 dB Compression: 13.
5 dB Typical G1 dB at 2.
0␣ GHz • Low Noise Figure: 1.
9 dB Typical NFO at 2.
0␣ GHz • High Gain-Bandwidth Product: 8.
0 GHz Typical fT • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] BASE 1 420 plastic package.
The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions.
The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications.
Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer.
An optimum noise match near 50␣ Ω up to 1 GHz, makes this device easy to use as a low noise amplifier.
The AT-42086 bipolar transistor is fabricated using Hewlett- Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process.
The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.
86 Plastic Package Pin Connections EMITTER 4 COLLECTOR 3 Description Hewlett-Packard’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.
The AT-42086 is housed in a low cost surface mount .
085" diameter Note: 1.
Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.
” 2 EMITTER 5965-8914E 4-174 AT-42086 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.
5 20 12 80 500 150 -65 to 150 Thermal Resistance [2,4]: θjc = 140°C/W Notes: 1.
Permanent damage ...

Similar Datasheet

AT-42000 Up to 6 GHz Medium Power Up to 6 GHz Medium Power - Agilent(Hewlett-Packard)
AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor - Agilent(Hewlett-Packard)
AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor - HP
AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor - Agilent(Hewlett-Packard)
AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor - Agilent
AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor - Agilent(Hewlett-Packard)
AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor - Avago

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)