3.3V 4M x 4-Bit EDO-Dynamic RAM
3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20...
Siemens Semiconductor Group