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HYB3116405BTL-50

Siemens Semiconductor Group
Part Number HYB3116405BTL-50
Manufacturer Siemens Semiconductor Group
Description 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
Published Mar 26, 2005
Detailed Description 3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information • •...
Datasheet PDF File HYB3116405BTL-50 PDF File

HYB3116405BTL-50
HYB3116405BTL-50

Overview
3.
3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns • • • • • • • • Single + 3.
3 V (± 0.
3V ) supply Low power dissipation max.
396 active mW (HYB3117405BJ/BT-50) max.
363 active mW (HYB3117405BJ/BT-60) max.
330 active mW (HYB3117405BJ/BT-70) max.
360 active mW (HYB3116405BJ/BT-50) max.
324 active mW (HYB3116405BJ/BT-60) max.
288 active mW (HYB3116405BJ/BT-70) 7.
2 mW standby (LV-TTL) 3.
6 mW standby (LV-CMOS) 720 µW standby for L-version Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, Self Refresh and test mode Hyper pa...


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