Part Number
|
HYB3116405BTL-70 |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Published
|
Mar 26, 2005 |
Detailed Description
|
3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70
Advanced Information
• •...
|
Datasheet
|
HYB3116405BTL-70
|
Overview
3.
3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70
Advanced Information
• • •
4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns
• •
• • • • • •
Single + 3.
3 V (± 0.
3V ) supply Low power dissipation max.
396 active mW (HYB3117405BJ/BT-50) max.
363 active mW (HYB3117405BJ/BT-60) max.
330 active mW (HYB3117405BJ/BT-70) max.
360 active mW (HYB3116405BJ/BT-50) max.
324 active mW (HYB3116405BJ/BT-60) max.
288 ac...
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