Part Number
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HYB314171BJ-70 |
Manufacturer
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Siemens Semiconductor Group |
Description
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3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Published
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Mar 26, 2005 |
Detailed Description
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3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB 314171BJ-50/-60/-70 HYB...
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Datasheet
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HYB314171BJ-70
|
Overview
3.
3V 256 K x 16-Bit Dynamic RAM 3.
3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70
Preliminary Information
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262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) 70 ns (-70 version) CAS access time: 15ns (-50,-60 version) 20 ns (-70 version) Cycle time: 95 ns (-50 version) 110 ns (-60 version) 130 ns (-70 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) Single + 3.
3 V (± 0.
3 V) supply with a builtin VBB generator
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Low Power dissipation max.
450 m...
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