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HYB314171BJ-70

Siemens Semiconductor Group
Part Number HYB314171BJ-70
Manufacturer Siemens Semiconductor Group
Description 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
Published Mar 26, 2005
Detailed Description 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB...
Datasheet PDF File HYB314171BJ-70 PDF File

HYB314171BJ-70
HYB314171BJ-70

Overview
3.
3V 256 K x 16-Bit Dynamic RAM 3.
3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) 70 ns (-70 version) CAS access time: 15ns (-50,-60 version) 20 ns (-70 version) Cycle time: 95 ns (-50 version) 110 ns (-60 version) 130 ns (-70 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) Single + 3.
3 V (± 0.
3 V) supply with a builtin VBB generator • • • • • • • • • • • • • • Low Power dissipation max.
450 m...


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