HI-SINCERITY MICROELECTRONICS CORP.
HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6629 Issued Date : 1995.
12.
18 Revised Date : 2006.
02.
20 Page No.
: 1/4 Description Low frequency power amplifier complementary pair with HSD669A.
Absolute Maximum Ratings (TA=25°C) TO-126ML • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation ...

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