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HSB649T

Hi-Sincerity Mocroelectronics
Part Number HSB649T
Manufacturer Hi-Sincerity Mocroelectronics
Description SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Published Mar 24, 2016
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HT200103 Issued Date : ...
Datasheet PDF File HSB649T PDF File

HSB649T
HSB649T

Overview
HI-SINCERITY MICROELECTRONICS CORP.
HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HT200103 Issued Date : 2001.
12.
01 Revised Date : 2005.
12.
02 Page No.
: 1/4 Description Low frequency power amplifier.
Absolute Maximum Ratings (TA=25°C) TO-126 • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) .
20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage.
.
.
-180 V BVCEO Collector to Emitter Voltage -160 V BVEBO Emitter to Base Voltage -5 V IC Collector Current (DC) -1.
5 A IC Collector Current (Pulse) -3 A Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Max.
) 6.
25 °C/W Electrical Characteristics (TA=25°C) Symbol BVCBO B...


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