HI-SINCERITY
MICROELECTRONICS CORP.
HSD879D
SILICON
NPN EPITAXIAL TYPE
TRANSISTOR
Spec.
No.
: HD200203 Issued Date : 1996.
07.
15 Revised Date : 2006.
02.
20 Page No.
: 1/4
Description
For 1.
5V and 3v electronic flash use.
Features
• Charger-up time is about 1 ms faster than of a germanium
transistor.
• Small saturation voltage can bring less power dissipation and flashing times.
TO-126ML
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature .
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-55 ~ +150 °C Junction Temperature .
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