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HSD879D

Hi-Sincerity Mocroelectronics
Part Number HSD879D
Manufacturer Hi-Sincerity Mocroelectronics
Description SILICON NPN EPITAXIAL TYPE TRANSISTOR
Published Mar 26, 2005
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Spec. No. : HD200203 Issued Date : 19...
Datasheet PDF File HSD879D PDF File

HSD879D
HSD879D

Overview
HI-SINCERITY MICROELECTRONICS CORP.
HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Spec.
No.
: HD200203 Issued Date : 1996.
07.
15 Revised Date : 2006.
02.
20 Page No.
: 1/4 Description For 1.
5V and 3v electronic flash use.
Features • Charger-up time is about 1 ms faster than of a germanium transistor.
• Small saturation voltage can bring less power dissipation and flashing times.
TO-126ML Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.
4 W • Maximum Voltages and Currents (TA=25°C) BVCBO Co...


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