HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm  HN2D01F is composed of 3 independent diodes.
 Low forward voltage : VF (3) = 0.
98 V (typ.
)  Fast reverse recovery time : trr = 1.
6 ns (typ.
)  Small total capacitance : CT = 0.
5 μF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 240 (*) mA Average forward current IO 80 (*) mA Surge current (10 ms) IFSM 1 (*) A Power dissipation PD (Note 3) 300 mW Junction temperature Storage temperature Tj (Note 1) 150 °C Tj (Note ...

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