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HN2D01F

Toshiba Semiconductor
Part Number HN2D01F
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 26, 2005
Detailed Description HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm  HN2D01F...
Datasheet PDF File HN2D01F PDF File

HN2D01F
HN2D01F

Overview
HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm  HN2D01F is composed of 3 independent diodes.
 Low forward voltage : VF (3) = 0.
98 V (typ.
)  Fast reverse recovery time : trr = 1.
6 ns (typ.
)  Small total capacitance : CT = 0.
5 μF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 240 (*) mA Average forward current IO 80 (*) mA Surge current (10 ms) IFSM 1 (*) A Power dissipation PD (Note 3) 300 mW Junction temperature Storage temperature Tj (Note 1) 150 °C Tj (Note ...


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