AM83135-005
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RF & MICROWAVE
TRANSISTORS S-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALL IZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.
0 W MIN.
WITH 5.
2 dB GAIN
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400 x .
400 2NL FL (S042) hermetically sealed O RDER CODE AM83135-005 BRANDING 83135-5
DESCRIPTION The AM83135-005 device is a medium power silicon bipolar
NPN transistor specifically designed for S-Band radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths.
duty cycles and temperatures, and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory...