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AM83135-050

Part Number	AM83135-050
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS
Published	Mar 26, 2005
Detailed Description	AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER...
Datasheet	AM83135-050 PDF File

Overview

AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN.
WITH 5.
2 dB GAIN .
310 x .
310 2LF L (S064) hermetically sealed O RDER CODE AM83135-050 BRANDING 83135-50 DESCRIPTION The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is characterized at 10 µsec pulsewidth and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperat...

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