AM83135-030
RF & MICROWAVE
TRANSISTORS S-BAND RADAR APPLICATIONS
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PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN.
WITH 5.
5 dB GAIN
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310 x .
310 2LFL (S064) hermetically sealed ORDER CODE AM83135-030 BRANDING AM83135-30
DESCRIPTION The AM83135-030 device is a high power silicon bipolar
NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and withstan...