DISCRETE SEMICONDUCTORS
DATA SHEET
LTE42008R
NPN microwave power
transistor
Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Input matching cell improves input impedance and allows an easier design of circuits.
APPLICATION • Common emitter class-A linear power amplifiers up to 4.
2 GHz.
PINNING - SOT440A PIN 1 2 3 collector base
LTE42008R
DESCRIPTION
emitter connecte...