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LTE42005S

NXP
Part Number LTE42005S
Manufacturer NXP
Description NPN microwave power transistor
Published Mar 27, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of Ju...
Datasheet PDF File LTE42005S PDF File

LTE42005S
LTE42005S

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Input matching cell improves input impedance and allows an easier design of circuits APPLICATION • Common emitter class-A linear power amplifiers up to 4.
2 GHz.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
2 Top view columns LTE42005S PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 MAM131 e Marking code: 502 Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.
MODE OF OPERATION Class-A (CW) linear f (GHz) 4.
2 VCE (V) 18 IC (mA) 110 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions.
After use, dispose of as chemical or special waste according to the regulations applying at the location of the user.
It must never be thrown out with the general or domestic waste.
PL1 (mW) ≥450 Gpo (dB) ≥6.
6 Zi (Ω) 100 + j40 ZL (Ω) 4 + j4 1997 Feb 21 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation...


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