ON Semiconductort
Complementary Silicon Power
Transistors
These complementary silicon power
transistors are designed for high–speed switching applications, such as switching
regulators and high frequency inverters.
The devices are also well–suited for drivers for high power switching circuits.
• Fast Switching —
tf = 90 ns (Max)
• Key Parameters Specified @ 100_C • Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.
0 V (Max) @ 8.
0 A
• Complementary Pairs Simplify Circuit Designs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Volt...