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D44C1

Inchange Semiconductor
Part Number D44C1
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jul 13, 2016
Detailed Description isc Silicon NPN Power Transistors D44C1 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Spe...
Datasheet PDF File D44C1 PDF File

D44C1
D44C1

Overview
isc Silicon NPN Power Transistors D44C1 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C1 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.
0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.
2 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA 0.
5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 100mA 1.
3 V ICES Collector Cutoff Current VCE= 40V, VBE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.
2A; VCE= 1V 25 hFE-2 DC Current Gain IC= 1A; VCE= 1V 10 fT Current-Gain—Bandwidth Product IC= 20mA;VCE= 4V;ftest= 1MHz 50 MHz Switching Times tr Rise Time ts Storage Time tf Fall Time IC= 1A; IB1= -IB2= 0.
1A; VCC= 20V 0.
3 μs 0.
7 μs 0.
4 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applica...


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