2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator, DC-DC converter
Outline
DPAK-1 4 4 1 1 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S
2
3
2 3
2SJ319(L), 2SJ319(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings –200 ±20 –3 –12...