Ordering number:ENN6396 P-Channel Silicon MOSFET 2SJ339 Ultrahigh-Speed Switching Applications Features · Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Micaless package facilitating mounting.
Package Dimensions unit:mm 2063A [2SJ339] 10.
0 3.
2 4.
5 2.
8 3.
5 7.
2 16.
0 18.
1 5.
6 14.
0 1.
6 1.
2 0.
75 1 2 3 2.
55 2.
4 0.
7 2.
55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C 2.
55 2.
55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Conditions ...

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