TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
2SJ342
High Speed Switching Applications Analog Switch Applications
• Low threshold voltage: Vth = −0.
8~−2.
5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825
Equivalent Circuit
2SJ342
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
Rating
−50 −7 −50 300 150 −55~150
Unit
V V mA mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-4E1E
Weight: 0.
13 g (typ.
)
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/c...