DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ357
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The 2SJ357 is a P-channel vertical MOS FET that can be used as a switching element.
The 2SJ357 can be directly driven by an IC operating at 5 V.
The 2SJ357 features a low on-resistance and excellent switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter.
Package Drawings (unit: mm)
5.
7 ±0.
1 2.
0 ±0.
2 1.
5 ±0.
1
FEATURES
1.
0
1 0.
5 ±0.
1
2
3
• New-type compact package Has advantages of packages for small signals and for power
transistors, and compensates those disadvantages • Can be directly driven by an IC operating at 5 V.
• Low on-resistance RDS(ON) = 0...