2SJ360
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ360
High Speed, High current Switching Applications
Chopper
Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 0.
55 Ω (typ.
)
z High forward transfer admittance
: |Yfs| = 0.
9 S (typ.
)
z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode : Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 k Ω)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
Drain current
DC (Note 1...