Part Number
|
2SJ363 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Datasheet
|
2SJ363
|
Features
• Low on-resistance
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S
3
G
2SJ363
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source ...
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