2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance Low drive current 2.
5 V Gate drive device can be driven from 3 V Source Suitable for Switching
regulator, DC - DC converter
Outline
DPAK-2 4 4 1 1 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2
2
3
3
2SJ387(L), 2SJ387(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings –20 ...