Silicon MOS FETs (Small Signal) 2SK601 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
2.
6±0.
1 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 0.
4max.
45˚ 1.
0–0.
2 +0.
1 0.
4±0.
08 4.
0–0.
20 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15 0.
4±0.
04 Symbol VDS VGSO ID IDP PD * Ratings 80 20 ±0.
5 ±1 1 150 −55 ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)