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2SK0662

Part Number	2SK0662
Manufacturer	Panasonic Semiconductor
Description	Silicon N-Channel Junction FET
Published	Jan 6, 2006
Detailed Description	Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification un...
Datasheet	2SK0662 PDF File

Overview

Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm (0.
425) I Features 0.
3+0.
1 –0.
0 3 0.
15+0.
10 –0.
05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
1.
25±0.
10 2.
1±0.
1 5° 1 2 (0.
65) (0.
65) 1.
3±0.
1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30 −30 20 10 150 125 −55 to +125 Unit V V mA mA mW °C °C 2.
0±0.
2 10° 1:...

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