Part Number
|
2SK1697 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK1697
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High spe...
|
Datasheet
|
2SK1697
|
Overview
2SK1697
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source.
Suitable for DC – DC converter, motor drive, power switch, solenoid drive
Outline
UPAK 2 1 4
3
D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S
2SK1697
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 60 ±20 0.
5 1.
5 0.
5 1 150 –55 to +150
Unit V V A A A...
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