DatasheetsPDF.com

2SK1606

Panasonic
Part Number 2SK1606
Manufacturer Panasonic
Description Field Effect Transistors
Published Jul 12, 2005
Detailed Description Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capa...
Datasheet PDF File 2SK1606 PDF File

2SK1606
2SK1606

Overview
Power F-MOS FETs 2SK1606 www.
DataSheet4U.
com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 4.
2±0.
2 s Applications 16.
7±0.
3 7.
5±0.
2 q High-speed switching (switching power supply) q For high-frequency power amplification φ3.
1±0.
1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±8 ±16 130 50 2 150 −55 to +150 Unit V V A A mJ 4.
0 1.
4±0.
1 1.
3±0.
2 14.
0±0.
5 Solder Dip 0.
5 +0.
2 –0.
1 0.
8±0.
1 2.
54±0.
25 5.
08±0.
5 Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C 1 2 W °C °C 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) 3 Single pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 360V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.
1mH, ID = 8A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A VDS = 20V, VGS = 0, f = 1MHz 3 450 130 1 0.
56 5 1300 160 70 VGS = 10V, ID = 4A VDD = 150V, RL = 37.
5Ω 70 50 150 5 0.
75 min typ max 0.
1 ±1 Unit mA µA V mJ V Ω S pF pF pF ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) * Avalanche energy capacity test circuit L ID Gate VDS Drain Source C VDD PVS RGS 1 Power F-MOS FETs ID  VDS 16 14 12 10 8 6V 6 4 2 0 0 10 20 PD=50W 30 40 50 60 5.
5V 10 2SK1606 | Yfs |  ID Drain to source ON-resistance RDS(o...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)