2SK1835
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switching
regulator
Outline and Equivalent Circuit
TO-3P
D
G
1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SK1835
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 1500 ±20 4 10 4 125 150 –...