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2SK1807

Renesas
Part Number 2SK1807
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Jul 9, 2016
Detailed Description 2SK1807 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File 2SK1807 PDF File

2SK1807
2SK1807

Overview
2SK1807 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G0974-0200 (Previous: ADE-208-1321) Rev.
2.
00 Sep 07, 2005 D 1.
Gate 2.
Drain (Flange) 3.
Source S Rev.
2.
00 Sep 07, 2005 page 1 of 6 2SK1807 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3.
Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 900 ±30 — — 2.
0 — 1.
7 — — — — — — — — — Typ — — — — — 3.
0 2.
7 740 305 150 15 60 100 80 0.
9 800 Ratings 900 ±30 4 10 4 60 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Max — — ±10 250 3.
0 4.
0 — — — — — — — — — — Unit V V µA µA V Ω (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V*3 S ID = 2 A, VDS = 20 V*3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID = 2 A, VGS = 10 V, ns RL = 15 Ω ns ns V IF = 4 A, VGS = 0 ns IF = 4 A, VGS = 0, diF/dt = 100 A/µs Rev.
2.
00 Sep 07, 2005 page 2 of 6 2SK1807 Main Characteristics Power...


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