Part Number
|
2SK1860 |
Manufacturer
|
Panasonic Semiconductor |
Description
|
Silicon N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
Silicon Junction FETs (Small Signal)
2SK1860
Silicon N-Channel Junction FET
Unit: mm
For impedance conversion in low f...
|
Datasheet
|
2SK1860
|
Overview
Silicon Junction FETs (Small Signal)
2SK1860
Silicon N-Channel Junction FET
Unit: mm
For impedance conversion in low frequency For electret capacitor microphone ■ Features
• High mutual conductance gm • Low noise voltage of NV
1
+0.
10 0.
40 –0.
05
0.
12 –0.
01
+0.
02
3
1.
5±0.
2
2.
1±0.
1 5.
8±0.
2
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source voltage (Gate open) Drain-gate voltage (Souse open) Drain-source current (Gate open) Drain-gate current (Souse open) Gate-source cutoff current (Drain open) Power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Rating 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit
10˚
(0.
95)
(0.
95...
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