DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2412
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2412 is N-Channel MOS Field Effect
Transistor designed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeters) 10.
0 ±0.
3 4.
5 ±0.
2 3.
2 ±0.
2 2.
7 ±0.
2
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX.
(@ VGS = 10 V, ID = 10 A)
15.
0 ±0.
3 3 ±0.
1 4 ±0.
2 12.
0 ±0.
2 13.
5 MIN.
RDS(on)2 = 95 mΩ MAX.
(@ VGS = 4 V, ID = 10 A)
• Low Ciss Ciss = 860 pF TYP.
• Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation...