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2SK2408

Hitachi Semiconductor
Part Number 2SK2408
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2408 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance Built-in...
Datasheet PDF File 2SK2408 PDF File

2SK2408
2SK2408

Overview
2SK2408 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, Motor control Outline TO-220AB D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SK2408 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 500 ±30 7 28 7 60 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2408 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 500 ±30 — — 2.
0 — 3.
5 — — — — — — — — — Typ — — — — — 0.
7 6.
0 1100 310 50 15 55 100 48 0.
9 120 Max — — ±10 250 3.
0 0.
9 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF / dt = 100 A / µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 400 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 4A VGS = 10 V*1 ID = 4 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.
5 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr See characteristic curves of 2SK1516 3 2SK2408 Power vs.
Temperature Derating 80 Pch (W) I D (A) 50 20 10 5 2 1 0.
5 0.
2 0.
1 0.
05 0 50 100 150 Tc (°C) 200 1 Case Tempera...


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