Part Number
|
2SK2684L |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N Channel DV-L MOS FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK2684(L), 2SK2684(S)
Silicon N Channel DV–L MOS FET High Speed Power Switching
ADE-208-542 1st. Edition Features
• Lo...
|
Datasheet
|
2SK2684L
|
Overview
2SK2684(L), 2SK2684(S)
Silicon N Channel DV–L MOS FET High Speed Power Switching
ADE-208-542 1st.
Edition Features
• Low on-resistance R DS(on) = 20 mΩ typ.
(VGS = 10V, ID = 15 A) • 4V gate drive devices.
• High speed switching
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
S
2SK2684(L), 2SK2684(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 30 ±20 30 120 30...
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