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2SK2684

Part Number	2SK2684
Manufacturer	Hitachi Semiconductor
Description	Silicon N Channel DV-L MOS FET
Published	Mar 30, 2005
Detailed Description	2SK2684(L), 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 1st. Edition Features • Lo...
Datasheet	2SK2684 PDF File

Overview

2SK2684(L), 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 1st.
Edition Features • Low on-resistance R DS(on) = 20 mΩ typ.
(VGS = 10V, ID = 15 A) • 4V gate drive devices.
• High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SK2684(L), 2SK2684(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 30 120 30...

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