2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th.
Edition Jun 1998 Features • Low on-resistance R DS =0.
060 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.
...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)