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2SK2922

Part Number	2SK2922
Manufacturer	Hitachi Semiconductor
Description	Silicon N Channel MOS FET
Published	Mar 30, 2005
Detailed Description	2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675(Z) 1st. Edition Aug. 1998 Features • High power outpu...
Datasheet	2SK2922 PDF File

Overview

2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675(Z) 1st.
Edition Aug.
1998 Features • High power output, High gain, High efficiency PG = 8.
0dB, Pout = 31dBm, ηD = 57 %min.
(f = 836.
5MHz) • Compact package capable of surface mounting Outline UPAK 3 2 1 4 1.
Gate 2.
Source 3.
Drain 4.
Source This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
2SK2922 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 10 ±6 0.
7 1.
4 3 150 –45 ...

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