2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
040Ω typ.
• 4V gate drive devices.
• High speed switching Outline TO–220CFM D G 1 2 3 S 1.
Gate 2.
Drain 3.
Source 2SK2933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 15 60 15 15 19 25 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg ...

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