Part Number
|
2SK2936 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N Channel MOS FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-559B (Z) 3rd. Edition Jun 1998 Features
• Low on-r...
|
Datasheet
|
2SK2936
|
Overview
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-559B (Z) 3rd.
Edition Jun 1998 Features
• Low on-resistance R DS =0.
010 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
D
G 1 2 3
S
1.
Gate 2.
Drain 3.
Source
2SK2936
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 60 ±20 45 180 45 45 173 35 150 –55 to +150
Unit V V A A A A mJ W °C...
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