2SK2937 Silicon N Channel MOS FET High Speed Power Switching ADE-208-560C (Z) 4th.
Edition Jun 1998 Features • Low on-resistance R DS =0.
026 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2 S 1.
Gate 2.
Drain 3.
Source 3 2SK2937 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 25 100 25 20 34 25 150 –55 to +150 Unit V V A A A A mJ W °C °...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)