2SK2964
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (L2−π−MOSVI)
2SK2964
Chopper
Regulators, DC−DC Converters and Motor DriveApplications
z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.
13 Ω (typ.
) z High forward transfer admittance: |Yfs| = 2.
5 S (typ.
) z Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode: Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Single pulse avalanche ener...