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2SK2973

Part Number 2SK2973
Manufacturer Mitsubishi Electric Semiconductor
Description RF POWER MOS FET
Published Mar 30, 2005
Detailed Description MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF...
Datasheet 2SK2973




Overview
MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
OUTLINE DRAWING 4.
6MAX 1.
6±0.
2 Dimensions in mm 1.
5±0.
1 FEATURES • High power gain:Gpe≥13dB @VDD=9.
6V,f=450MHz,Pin=17dBm • High efficiency:55% typ.
• Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
1.
5 0.
53 MAX 0.
48MAX 1 : DRAIN 2 : SOURCE 3 : GATE 0.
4 +0.
03 -0.
05 3.
0 MARKING SOT-89 MARKING TYPE No.
K1 LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted) Symbol VDSS VGSS Pch Tj Tstg Paramete...






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