2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
09 Ω typ.
(V GS = 4 V, ID = 1.
5 A) • Low drive current • High speed switching • 2.
5V gate drive devices.
Outline UPAK 3 D 2 1 4 G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SK2978 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 20 ±10 2.
5 5 2.
5 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 1 150 –55 to +150 1.
PW ≤ 10µs, d...

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