2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
2 Ω typ.
(VGS = 4 V, I D = 500 mA) • 2.
5V gate drive devices.
• Small package (MPAK) Outline MPAK 3 1 D 2 G 1.
Source 2.
Gate 3.
Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12 –10 Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: ID I D(pulse) Pch Tch Tstg Note1 Note2 Unit V V V A A W °C °C 1.
0 4 0.
8 150 –55 to +150 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at when using alumina ceramic board (12.
5 x 20 x...

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