DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2981
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
PACKAGE DRAWING (Unit : mm) FEATURES
6.
5 ±0.
2 5.
0 ±0.
2
1.
6 ±0.
2 1.
5 –0.
1
• Low on-resistance RDS(on)1 = 27 mΩ (MAX.
) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX.
) (VGS = 4.
5 V, ID = 10 A) RDS(on)3 = 50 mΩ (MAX.
) (VGS = 4 V, ID = 10 A) • Low Ciss : Ciss = 860 pF (TYP.
) • Built-in gate protection diode
+0.
2
2.
3 ±0.
2 0.
5 ±0.
1
4
1
2 3
1.
3 MAX.
7.
0 MIN.
5.
5 ±0.
2 13.
7 MIN.
0.
6 ±0.
1 2.
3 2.
3
0.
6 ±0.
1
ORDERING INFORMATION
PART NUMBER 2SK2981 2SK2981-Z PACKAGE TO-251
0.
8 4.
3 M...