DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2984
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for high current switching application.
FEATURES
• Low on-resistance RDS(on)1 = 10 mΩ (MAX.
) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mΩ (MAX.
) (VGS = 4.
5 V, ID = 20 A) • Low Ciss Ciss = 2850 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER 2SK2984 2SK2984-S 2SK2984-ZJ PACKAGE TO-220AB TO-262 TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note3 Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 ±20 ±40 ±160 1.
...